Characterization of HF cleaning of ion-implanted Si surfaces

被引:0
|
作者
Interuniversity Microelectronics, Cent, Leuven, Belgium [1 ]
机构
来源
Diffus Def Data Pt B | / 271-274期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
6
引用
收藏
相关论文
共 50 条
  • [21] EFFECTS OF AL FILMS ON ION-IMPLANTED SI
    LEE, DH
    HART, RR
    MARSH, OJ
    APPLIED PHYSICS LETTERS, 1972, 20 (02) : 73 - &
  • [22] Spectroscopic characterization of ion-implanted GaN
    Chen, L
    Skromme, BJ
    GAN AND RELATED ALLOYS-2002, 2003, 743 : 755 - 760
  • [23] CHARACTERIZATION OF ION-IMPLANTED IMPATT OSCILLATORS
    YING, RS
    MANKARIO.RG
    ENGLISH, DL
    BOWER, RW
    COERVER, LE
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1968, SC 3 (03) : 225 - &
  • [24] Surface characterization of ion-implanted polyethylene
    Tretinnikov, ON
    Ikada, Y
    JOURNAL OF POLYMER SCIENCE PART B-POLYMER PHYSICS, 1998, 36 (04) : 715 - 725
  • [25] ION-IMPLANTED SI MESFET RING OSCILLATORS
    GRUHLE, A
    FERNHOLZ, G
    BENEKING, H
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (04) : 872 - 876
  • [26] CHARACTERIZATION OF THE MICROHARDNESS OF ION-IMPLANTED GAP
    ASCHERON, C
    NEUMANN, H
    KUHN, G
    CRYSTAL RESEARCH AND TECHNOLOGY, 1991, 26 (03) : 273 - 281
  • [27] ANOMALOUS MIGRATION OF ION-IMPLANTED AL IN SI
    DIETRICH, HB
    WEISENBERGER, WH
    COMAS, J
    APPLIED PHYSICS LETTERS, 1976, 28 (04) : 182 - 184
  • [28] TEM investigations of Si ion-implanted GaN
    Zou, J
    Cockayne, DJH
    Duan, XF
    Tan, HH
    Williams, JS
    Pearton, SJ
    Stall, SA
    ELECTRON MICROSCOPY 1998, VOL 3: MATERIALS SCIENCE 2, 1998, : 481 - 482
  • [29] CHARACTERIZATION OF DAMAGE IN ION-IMPLANTED GE
    APPLETON, BR
    HOLLAND, OW
    NARAYAN, J
    SCHOW, OE
    WILLIAMS, JS
    SHORT, KT
    LAWSON, E
    APPLIED PHYSICS LETTERS, 1982, 41 (08) : 711 - 712
  • [30] CHARACTERIZATION OF ION-IMPLANTED GAAS BY ELLIPSOMETRY
    KIM, Q
    PARK, YS
    JOURNAL OF APPLIED PHYSICS, 1980, 51 (04) : 2024 - 2029