TEM investigations of Si ion-implanted GaN

被引：0

作者：

Zou, J ^{[1
]}

Cockayne, DJH ^{[1
]}

Duan, XF ^{[1
]}

Tan, HH ^{[1
]}

Williams, JS ^{[1
]}

Pearton, SJ ^{[1
]}

Stall, SA ^{[1
]}

机构：

[1] Univ Sydney, Australian Key Ctr Microscopy & Microanal, Sydney, NSW 2006, Australia

来源：

ELECTRON MICROSCOPY 1998, VOL 3: MATERIALS SCIENCE 2 | 1998年

关键词：

D O I：

暂无

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：481 / 482

页数：2

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