Barrier height of metal/InP Schottky contacts with interface oxide layer

被引：0

作者：

Yamagishi, Haruo ^{[1
]}

机构：

[1] Toshiba Corp, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1988年 / 27 pt 1卷 / 06期

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摘要：

引用

页码：997 / 1001

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