Barrier height of metal/InP Schottky contacts with interface oxide layer

被引：0
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作者：
Yamagishi, Haruo [1 ]
机构：
[1] Toshiba Corp, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1988年 / 27 pt 1卷 / 06期
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摘要：
14
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页码：997 / 1001
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