Epitaxial lateral overgrowths of GaAs on (001) GaAs substrates by LPE. Growth behavior and mechanism

被引:0
|
作者
Zhang, S. [1 ]
Nishinaga, T. [1 ]
机构
[1] Univ of Tokyo, Japan
来源
| 1600年 / 99期
关键词
Epitaxial Lateral Overgrowths - Plasma Chemical Vapor Deposition;
D O I
暂无
中图分类号
学科分类号
摘要
(Edited Abstract)
引用
收藏
相关论文
共 50 条
  • [21] Planar Hall effect in epitaxial Fe layers on GaAs(001) and GaAs(113)A substrates
    Friedland, KJ
    Herfort, J
    Muduli, PK
    Schönherr, HP
    Ploog, KH
    [J]. JOURNAL OF SUPERCONDUCTIVITY, 2005, 18 (03): : 309 - 314
  • [22] Planar Hall Effect in Epitaxial Fe Layers on GaAs(001) and GaAs(113)A Substrates
    K.-J. Friedland
    J. Herfort
    P. K. Muduli
    H.-P. Schönherr
    K. H. Ploog
    [J]. Journal of Superconductivity, 2005, 18 (3): : 309 - 314
  • [23] Lateral epitaxial overgrowth of InAs on (100) GaAs substrates
    Suryanarayanan, G
    Khandekar, AA
    Hawkins, BE
    Kuech, TF
    Babcock, SE
    [J]. PROGRESS IN SEMICONDUCTORS II- ELECTRONIC AND OPTOELECTRONIC APPLICATIONS, 2003, 744 : 9 - 14
  • [24] Nucleation and islands growth of CdZnTe(001) epitaxial films on GaAs (001) substrates by close spaced sublimation
    Cao, Kun
    Jie, Wanqi
    Zha, Gangqiang
    Tan, Tingting
    Li, Yingrui
    Hu, Ruiqi
    [J]. JOURNAL OF CRYSTAL GROWTH, 2018, 498 : 197 - 201
  • [25] Hetero-epitaxial growth of BexZn1-xSe on Si(001) and GaAs(001) substrates
    Faurie, JP
    Bousquet, V
    Brunet, P
    Tournie, E
    [J]. JOURNAL OF CRYSTAL GROWTH, 1998, 184 : 11 - 15
  • [26] Nucleation of misfit and threading dislocations during epitaxial growth of GaSb on GaAs(001) substrates
    Qian, W
    Skowronski, M
    Kaspi, R
    DeGraef, M
    Dravid, VP
    [J]. JOURNAL OF APPLIED PHYSICS, 1997, 81 (11) : 7268 - 7272
  • [27] Growth and magnetoresistance of epitaxial metallic MnAs/NiAs/MnAs trilayers on GaAs (001) substrates
    Nakane, R
    Sugahara, S
    Tanaka, M
    [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 21 (2-4): : 991 - 995
  • [28] EPITAXIAL-GROWTH OF GE ON GAAS SUBSTRATES
    KRAUTLE, H
    ROENTGEN, P
    BENEKING, H
    [J]. JOURNAL OF CRYSTAL GROWTH, 1983, 65 (1-3) : 439 - 443
  • [29] GROWTH OF EPITAXIAL GAAS FILMS ON SILICON SUBSTRATES
    VERNON, S
    SHANFIELD, S
    WOLFSON, R
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (06) : C240 - C240
  • [30] Preparation of nanoporous GaAs substrates for epitaxial growth
    Grym, Jan
    Nohavica, Dusan
    Vanis, Jan
    Piksova, Katerina
    [J]. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 7, 2012, 9 (07): : 1531 - 1533