EPITAXIAL-GROWTH OF GE ON GAAS SUBSTRATES

被引：18

|

作者：

KRAUTLE, H

ROENTGEN, P

BENEKING, H

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1983年 / 65卷 / 1-3期

关键词：

D O I：

10.1016/0022-0248(83)90084-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：439 / 443

页数：5

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