Hetero-epitaxial growth of BexZn1-xSe on Si(001) and GaAs(001) substrates

被引：24
|
作者：
Faurie, JP [1 ]
Bousquet, V [1 ]
Brunet, P [1 ]
Tournie, E [1 ]
机构：
[1] CNRS, Ctr Rech Heteroepitaxie & Applicat, F-06560 Valbonne, France
来源：
JOURNAL OF CRYSTAL GROWTH | 1998年 / 184卷
关键词：
Be-compounds; MBE; growth; band-gap;
D O I：
10.1016/S0022-0248(97)00534-4
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The growth of BexZn1-xSe alloys has been investigated by molecular beam epitaxy on Si(0 0 1) and GaAs(0 0 1). The best results concerning BeSe have been obtained on Si(0 0 1) substrates with miscut of 4 degrees towards [1 1 0], at growth temperatures of at least 500 degrees C and with low growth rates of 0.1-0.2 Angstrom/s. A lattice parameter of 5.139 +/- 0.002 Angstrom has been measured on a 1 mu m thick layer. The direct bandgaps of BexZn1-xSe alloys have been measured through photoluminescence and reflectivity experiments. However, these optical studies have not been able to draw yet a conclusion on the existence of a direct-indirect bandgap transition. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：11 / 15
页数：5
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