3C-SiC hetero-epitaxial growth on undulant Si(001) substrate

被引：123

作者：

Nagasawa, H ^{[1
]}

Yagi, K ^{[1
]}

Kawahara, T ^{[1
]}

机构：

[1] Hoya Corp, R&D Ctr, EO Co, Tokyo 1968510, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2002年 / 237卷 / 1-4 II期

关键词：

crystal morphology; growth models; planar defects; chemical vapor deposition; vapor phase epitaxy; semiconducting silicon compounds;

D O I：

10.1016/S0022-0248(01)02233-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A novel technique to eliminate planar defects in the 3C-SiC hetero-epitaxial layer on Si substrate was developed. Before growing 3C-SiC, countered slopes oriented in the [1 1 0] and [(1) over bar (1) over bar 0] directions were formed over the entire surface of Si(0 0 1) substrate (undulant-Si). In the initial stage of 3C-SiC growth, step flow epitaxy occurred on the surface slopes of the substrate, reducing the anti-phase boundaries. Continuous, twin boundaries (TBs) were arranged in parallel along the (1 1 1) or ((1) over bar (1) over bar 1) planes. The twin boundaries were eliminated through combination of the countered TBs with 3C-SiC growth. Finally, no planar defects were observed on the surface of 200-mum thick 3C-SiC grown on "Undulant-Si". (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：1244 / 1249

页数：6

共 50 条

[1] Hetero-epitaxial Growth of 3C-SiC with Smooth Surface on Si(001) using Acetylene Gas
Hirabayashi, Yasuo
Kaneko, Satoru
Akiyama, Kensuke
[J]. SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 247 - 250
[2] 3C-SiC on Si Hetero-epitaxial Growth for Electronic and Biomedical Applications
Reyes, M.
Frewin, C. L.
Ward, P. J.
Saddow, S. E.
[J]. GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 3, 2013, 58 (04): : 119 - 126
[3] Hetero-epitaxial growth of 3C-SiC on Si(111) by plasma assisted CVD
Shimizu, Hideki
Kato, Akira
[J]. SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, 556-557 : 183 - +
[4] Hetero-epitaxial growth of 3C-SiC on SOI using HMDS
Aboughe-Nze, P
Planes, N
Ravetz, M
Fraisse, B
Contreras, S
Vicente, P
Chassagne, T
Monteil, Y
Rushworth, S
Camassel, J
[J]. SEMICONDUCTOR WAFER BONDING: SCIENCE, TECHNOLOGY, AND APPLICATIONS V, PROCEEDINGS, 2001, 99 (35): : 92 - 99
[5] Hetero-epitaxial growth of 3C-SiC on carbonized silicon substrates
Shimizu, H
Hisada, K
[J]. SILICON CARBIDE AND RELATED MATERIALS - 2002, 2002, 433-4 : 229 - 232
[6] Key radicals for hetero-epitaxial growth of 3C-SiC on silicon substrates
Shimizu, H
Hisada, K
Aoyama, Y
[J]. SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, 483 : 209 - 212
[7] 3C-SiC hetero-epitaxial films for sensor fabrication
Anzalone, R.
Severino, A.
Locke, C.
Rodilosso, D.
Tringali, C.
Saddow, S. E.
La Via, F.
D'Arrigo, G.
[J]. SMART MATERIALS & MICRO/NANOSYSTEMS, 2009, 54 : 411 - 415
[8] Ultraviolet and Visible Photodetection Using 3C-SiC/Si Hetero-Epitaxial Junction
Foisal, Abu Riduan Md
Toan Dinh
Tanner, Philip
Hoang-Phuong Phan
Tuan-Khoa Nguyen
Iacopi, Alan
Streed, Erik W.
Dzung Viet Dao
[J]. SUSTAINABLE DESIGN AND MANUFACTURING 2018, KES-SDM-18, 2019, 130 : 208 - 216
[9] Stress evaluation on hetero-epitaxial 3C-SiC film on (100) Si substrates
Anzalone, R.
Camarda, M.
Locke, C.
Carballo, J.
Piluso, N.
D'Arrigo, G.
Severino, A.
Volinsky, A. A.
Saddow, S. E.
La Via, F.
[J]. SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, 717-720 : 521 - +
[10] Influence of substrate roughness on the formation of defects in 3C-SiC grown on Si(110) substrate by hetero-epitaxial CVD method
Isshiki, T
Nakamura, M
Nishiguchi, T
Nishio, K
Ohshima, S
Nishino, S
[J]. SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, 483 : 185 - 188

← 1 2 3 4 5 →