Epitaxial lateral overgrowths of GaAs on (001) GaAs substrates by LPE. Growth behavior and mechanism

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作者：
Zhang, S. [1 ]
Nishinaga, T. [1 ]
机构：
[1] Univ of Tokyo, Japan
来源：
| 1600年 / 99期
关键词：
Epitaxial Lateral Overgrowths - Plasma Chemical Vapor Deposition;
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(Edited Abstract)
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