Physics-based short-channel current-voltage model for lightly-doped-drain metal-oxide-semiconductor field-effect-transistors

被引：0

作者：

Hu, Man-Chun ^{[1
]}

Jang, Sheng-Lyang ^{[1
]}

Chyau, Chwan-Gwo ^{[1
]}

机构：

[1] Natl Taiwan Inst of Technology, Taipei, Taiwan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1997年 / 36卷 / 6 A期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：3448 / 3459

共 50 条

[31] Integration process of impact-ionization metal-oxide-semiconductor devices with tunneling field-effect-transistors and metal-oxide-semiconductor field-effect transistors
Choi, Woo Young
Lee, Jong Duk
Park, Byung-Gook
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (01): : 122 - 124
[32] On the Voltage Transfer Characteristics (VTC) of some Nanoscale Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFETs)
Saha, Jhuma
Kumari, Amrita
Jha, Shankaranand
Kumar, Subindu
PHYSICS OF SEMICONDUCTOR DEVICES, 2014, : 211 - 214
[33] Influence of Effective Fixed Charges on Short-Channel Effects in SiC Metal-Oxide-Semiconductor Field-Effect Transistors
Noborio, Masato
Suda, Jun
Kimoto, Tsunenobu
JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (02)
[34] Physical analysis for saturation behavior of hot-carrier degradation in lightly doped drain N-channel metal-oxide-semiconductor field effect transistors
Goo, Jung-Suk, 1600, Publ by JJAP, Minato-ku, Japan (33):
[35] Impacts of SiN deposition parameters on n-channel metal-oxide-semiconductor field-effect-transistors
Lu, Ching-Sen
Lin, Horng-Chih
Huang, Tiao-Yuan
SOLID-STATE ELECTRONICS, 2008, 52 (10) : 1584 - 1588
[36] Simple model for substrate current characteristics in short-channel ultrathin-film metal-oxide-semiconductor field-effect transistors by separation by implanted oxygen
Omura, Yasuhisa, 1600, JJAP, Minato-ku, Japan (34):
[37] Compact drain-current model for undoped cylindrical surrounding-gate metal-oxide-semiconductor field effect transistors including short channel effects
Smaani, Billel
Latreche, Saida
Iniguez, Benjamin
JOURNAL OF APPLIED PHYSICS, 2013, 114 (22)
[38] CURRENT-VOLTAGE CHARACTERISTICS OF SILICON-ON-INSULATOR METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS IN BALLISTIC MODE
NATORI, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1B): : 554 - 557
[39] A detailed experimental investigation of impact ionization in n-channel metal-oxide-semiconductor field-effect-transistors at very low drain voltages
Anil, KG
Mahapatra, S
Eisele, I
SOLID-STATE ELECTRONICS, 2003, 47 (06) : 995 - 1001
[40] Hot-carrier effects on the scattering parameters of lightly doped drain n-type metal-oxide-semiconductor field effect transistors
Kwan, WS
Deen, MJ
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (02): : 628 - 632

← 1 2 3 4 5 →