Physical analysis for saturation behavior of hot-carrier degradation in lightly doped drain N-channel metal-oxide-semiconductor field effect transistors

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[1] Goo, Jung-Suk
[2] Shin, Hyungsoon
[3] Hwang, Hyunsang
[4] Kang, Dae-Gwan
[5] Ju, Dong-Hyuk
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Goo, Jung-Suk | 1600年 / Publ by JJAP, Minato-ku, Japan卷 / 33期
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