Physics-based short-channel current-voltage model for lightly-doped-drain metal-oxide-semiconductor field-effect-transistors

被引:0
|
作者
Hu, Man-Chun [1 ]
Jang, Sheng-Lyang [1 ]
Chyau, Chwan-Gwo [1 ]
机构
[1] Natl Taiwan Inst of Technology, Taipei, Taiwan
来源
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1997年 / 36卷 / 6 A期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:3448 / 3459
相关论文
共 50 条
  • [41] PHYSICAL ANALYSIS FOR SATURATION BEHAVIOR OF HOT-CARRIER DEGRADATION IN LIGHTLY DOPED DRAIN N-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
    GOO, JS
    SHIN, H
    HWANG, H
    KANG, DG
    JU, DH
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1B): : 606 - 611
  • [42] Wave function penetration effects in double gate metal-oxide-semiconductor field-effect-transistors: impact on ballistic drain current with device scaling
    Khan, Asif Islam
    Ashraf, Md. Khalid
    Haque, Anisul
    JOURNAL OF APPLIED PHYSICS, 2009, 105 (06)
  • [43] Radio Frequency Power Performance Enhancement for Asymmetric Lightly Doped Drain Metal-Oxide-Semiconductor Field-Effect Transistors on SiC Substrate
    Chang, Tsu
    Kao, Hsuan-ling
    Liu, S. L.
    Deng, Joseph D. S.
    Horng, K. Y.
    Chin, Albert
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (01)
  • [44] An analytical model of short-channel effect for metal-oxide-semiconductor field-effect transistor with insulated shallow extension
    Shih, CH
    Chen, YM
    Lien, C
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (12): : 7993 - 7996
  • [45] An analytical model of short-channel effect for metal-oxide-semiconductor field-effect transistor with insulated shallow extension
    Shih, C.-H. (chshih@saturn.yzu.edu.tw), 1600, Japan Society of Applied Physics (43):
  • [46] A SIMPLE-MODEL FOR SUBSTRATE CURRENT CHARACTERISTICS IN SHORT-CHANNEL ULTRATHIN-FILM METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS BY SEPARATION BY IMPLANTED OXYGEN
    OMURA, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1995, 34 (9A): : 4722 - 4727
  • [47] Characteristics of lateral diffused metal-oxide-semiconductor transistors with lightly doped drain implantation through gradual screen oxide
    Yan, Chin-Rung
    Chen, Jone F.
    Lin, Chung-Yi
    Hsu, Hao-Tang
    Liao, Yu-Jie
    Yang, Min-Ti
    Chen, Chih-Yuan
    Lin, Yin-Chia
    Chen, Huei-Haurng
    Japanese Journal of Applied Physics, 2013, 52 (4 PART 2):
  • [48] Characteristics of Lateral Diffused Metal-Oxide-Semiconductor Transistors with Lightly Doped Drain Implantation through Gradual Screen Oxide
    Yan, Chin-Rung
    Chen, Jone F.
    Lin, Chung-Yi
    Hsu, Hao-Tang
    Liao, Yu-Jie
    Yang, Min-Ti
    Chen, Chih-Yuan
    Lin, Yin-Chia
    Chen, Huei-Haurng
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (04)
  • [49] Spin dependent charge pumping in SiC metal-oxide-semiconductor field-effect-transistors
    Bittel, B. C.
    Lenahan, P. M.
    Ryan, J. T.
    Fronheiser, J.
    Lelis, A. J.
    APPLIED PHYSICS LETTERS, 2011, 99 (08)
  • [50] Effect of deep-level impurities on the drain characteristics of short-channel metal-semiconductor field effect transistors
    Chattopadhyay, P
    Majumdar, L
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (02) : 226 - 230