Physics-based short-channel current-voltage model for lightly-doped-drain metal-oxide-semiconductor field-effect-transistors

被引：0
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作者：
Hu, Man-Chun [1 ]
Jang, Sheng-Lyang [1 ]
Chyau, Chwan-Gwo [1 ]
机构：
[1] Natl Taiwan Inst of Technology, Taipei, Taiwan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1997年 / 36卷 / 6 A期
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页码：3448 / 3459
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