Integration process of impact-ionization metal-oxide-semiconductor devices with tunneling field-effect-transistors and metal-oxide-semiconductor field-effect transistors

被引：0

作者：

Choi, Woo Young ^{[1
,2
]}

Lee, Jong Duk ^{[1
,2
]}

Park, Byung-Gook ^{[1
,2
]}

机构：

[1] Inter-University Semiconductor Research Center, Seoul National University, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Korea, Republic of

[2] School of Electrical Engineering and Computer Sciences, Seoul National University, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-600, Korea, Republic of

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2007年 / 46卷 / 01期

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D O I：

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中图分类号：

学科分类号：

摘要：

Journal article (JA)

引用

页码：122 / 124

共 50 条

[1] Integration process of impact-ionization metal-oxide-semiconductor devices with tunneling field-effect-transistors and metal-oxide-semiconductor field-effect transistors
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