Crystal defects in vertical cavity epitaxial structures on GaAs investigated by X-ray methods

被引：0
|
作者：
Jenichen, Bernd [1 ]
Hey, Rudolf [1 ]
Westphal, Sven [1 ]
Kaganer, Vladimir [1 ]
Koehler, Rolf [1 ]
机构：
[1] Paul-Drude-Inst fuer, Festkoerperelektronik, Berlin, Germany
来源：
Materials science & engineering. B, Solid-state materials for advanced technology | 1994年 / B28卷 / 1-3期
关键词：
Semiconductor device structures;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：520 / 522
相关论文
共 50 条
  • [1] CRYSTAL DEFECTS IN VERTICAL-CAVITY EPITAXIAL STRUCTURES ON GAAS INVESTIGATED BY X-RAY-METHODS
    JENICHEN, B
    HEY, R
    WESTPHAL, S
    KAGANER, V
    KOHLER, R
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1994, 28 (1-3): : 520 - 522
  • [2] X-ray and γ-ray detectors based on GaAs epitaxial structures
    Ayzenshtat, GI
    Germogenov, VP
    Guschin, SM
    Okaevich, LS
    Shmakov, OG
    Tolbanov, OP
    Vorobiev, AP
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2004, 531 (1-2): : 97 - 102
  • [3] Photovoltaic X-ray detectors on the basis of GaAs epitaxial structures
    V. F. Dvoryankin
    G. G. Dvoryankina
    Yu. M. Dikaev
    M. G. Ermakov
    A. A. Kudryashov
    A. G. Petrov
    A. A. Telegin
    Instruments and Experimental Techniques, 2013, 56 : 87 - 92
  • [4] Epitaxial structures based on compensated GaAs for γ- and X-ray detectors
    Budnitsky, DL
    Germogenov, VP
    Guschin, SM
    Larionov, AA
    Porokhovnichenko, LP
    Potapov, AI
    Tolbanov, OP
    Vorobiev, AP
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2001, 466 (01): : 33 - 38
  • [5] Photovoltaic X-ray detectors based on epitaxial GaAs structures
    R. A. Achmadullin
    V. F. Dvoryankin
    G. G. Dvoryankina
    Yu. M. Dikaev
    M. G. Ermakov
    O. N. Ermakova
    A. I. Krikunov
    A. A. Kudryashov
    A. G. Petrov
    A. A. Telegin
    Technical Physics Letters, 2002, 28 : 15 - 16
  • [6] Photovoltaic X-ray detectors based on epitaxial GaAs structures
    Achmadullin, RA
    Artemov, VV
    Dvoryankin, VF
    Dvoryankina, GG
    Dikaev, YM
    Ermakov, MG
    Ermakova, ON
    Chmil, VB
    Holodenko, AG
    Kudryashov, AA
    Krikunov, AI
    Petrov, AG
    Telegin, AA
    Vorobiev, AP
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2005, 554 (1-3): : 314 - 319
  • [7] Photovoltaic X-ray detectors based on epitaxial GaAs structures
    Achmadullin, RA
    Dvoryankin, VF
    Dvoryankina, GG
    Dikaev, YM
    Ermakov, MG
    Ermakova, ON
    Krikunov, AI
    Kudryashov, AA
    Petrov, AG
    Telegin, AA
    TECHNICAL PHYSICS LETTERS, 2002, 28 (01) : 15 - 16
  • [8] Photovoltaic X-ray detectors on the basis of GaAs epitaxial structures
    Dvoryankin, V. F.
    Dvoryankina, G. G.
    Dikaev, Yu. M.
    Ermakov, M. G.
    Kudryashov, A. A.
    Petrov, A. G.
    Telegin, A. A.
    INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 2013, 56 (01) : 87 - 92
  • [9] Epitaxial GaAs X-ray detectors for X-ray astrophysics
    Bavdaz, M
    Owens, A
    Peacock, A
    HARD X-RAY, GAMMA-RAY, AND NEUTRON DETECTOR PHYSICS, 1999, 3768 : 451 - 456
  • [10] X-ray response of epitaxial GaAs
    Owens, A
    Bavdaz, M
    Kraft, S
    Peacock, A
    Nenonen, S
    Andersson, H
    Gagliardi, MA
    Gagliardi, T
    Scholze, F
    Ulm, G
    JOURNAL OF APPLIED PHYSICS, 1999, 85 (11) : 7522 - 7527
12345