Photovoltaic X-ray detectors based on epitaxial GaAs structures

被引：1

作者：

Achmadullin, RA

Artemov, VV

Dvoryankin, VF

Dvoryankina, GG

Dikaev, YM

Ermakov, MG

Ermakova, ON

Chmil, VB

Holodenko, AG

Kudryashov, AA

Krikunov, AI

Petrov, AG

Telegin, AA

Vorobiev, AP

机构：

[1] Russian Acad Sci, Inst Radio Engn & Elect, Fryazino 141190, Russia

[2] Russian Acad Sci, AV Shubnikov Crystallog Inst, Moscow 117333, Russia

[3] High Energy Phys Inst, Sci State Ctr, Protvino, Moscow Region, Russia

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2005年 / 554卷 / 1-3期

关键词：

X-ray detector; epitaxial GaAs;

D O I：

10.1016/j.nima.2005.07.073

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A new type of the photovoltaic X-ray detector based on epitaxial p(+)-n-n'-n(+) GaAs structures which provides a high efficiency of charge collection in the non-bias operation mode at room temperature is proposed. The GaAs epitaxial structures were grown by vapor-phase epitaxy on heavily doped n(+)-GaAs(100) substrates. The absorption efficiency of GaAs X-ray detector is discussed. I-V and C-V characteristics of the photovoltaic X-ray detectors are analyzed. The built-in electric field profiles in the depletion region of epitaxial structures are measured by the EBIC method. Charge collection efficiency to alpha-particles and gamma-radiation are measured. The application of X-ray detectors is discussed. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：314 / 319

页数：6

共 50 条

[1] Photovoltaic X-ray detectors based on epitaxial GaAs structures
R. A. Achmadullin
V. F. Dvoryankin
G. G. Dvoryankina
Yu. M. Dikaev
M. G. Ermakov
O. N. Ermakova
A. I. Krikunov
A. A. Kudryashov
A. G. Petrov
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[J]. Technical Physics Letters, 2002, 28 : 15 - 16
[2] Photovoltaic X-ray detectors based on epitaxial GaAs structures
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