Photovoltaic X-ray detectors based on epitaxial GaAs structures

被引：0
|
作者：
R. A. Achmadullin
V. F. Dvoryankin
G. G. Dvoryankina
Yu. M. Dikaev
M. G. Ermakov
O. N. Ermakova
A. I. Krikunov
A. A. Kudryashov
A. G. Petrov
A. A. Telegin
机构：
[1] Russian Academy of Sciences,Fryazino Branch, Institute of Radio Engineering and Electronics
来源：
Technical Physics Letters | 2002年 / 28卷
关键词：
GaAs; Radioactive Isotope; Charge Carrier; Vapor Phase; Detector Response;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A new type of the photovoltaic X-ray detector based on epitaxial p+-n-n′-n+ GaAs structures is proposed, which provides for a high efficiency of charge carrier collection in a nonbiased operation regime at room temperature. The GaAs structures were grown by vapor phase epitaxy on heavily doped n+-GaAs substrates. The X-ray sensitivity range covers the effective energies from 8 to 120 keV. The maximum output signal in the short-circuit regime is 30 μA min/(Gy cm2). The detector response to γ-radiation from a 137Cs[660 keV] radioactive isotope was measured.
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页码：15 / 16
页数：1
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