Photovoltaic X-ray detectors on the basis of GaAs epitaxial structures

被引：0
|
作者：
V. F. Dvoryankin
G. G. Dvoryankina
Yu. M. Dikaev
M. G. Ermakov
A. A. Kudryashov
A. G. Petrov
A. A. Telegin
机构：
[1] Russian Academy of Sciences,Institute for Radio Engineering and Electronics
来源：
Instruments and Experimental Techniques | 2013年 / 56卷
关键词：
GaAs; GaAs Layer; Guard Ring; Epitaxial Structure; Electron Beam Induce Current;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The results of investigations of the properties of a new photovoltaic X-ray detector are presented. The detector was manufactured on the basis of a GaAs (p+-n-n′-n+) epitaxial structure, which was grown using the vapor-phase epitaxy method. The detector sensitivity to X-rays in a range of effective energies of 7–120 keV was measured. Multichannel linear X-ray detectors were developed and used in obtaining high-quality digital images.
引用
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页码：87 / 92
页数：5
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