Photovoltaic X-ray detectors on the basis of GaAs epitaxial structures

被引：2
|
作者：
Dvoryankin, V. F. [1 ]
Dvoryankina, G. G. [1 ]
Dikaev, Yu. M. [1 ]
Ermakov, M. G. [1 ]
Kudryashov, A. A. [1 ]
Petrov, A. G. [1 ]
Telegin, A. A. [1 ]
机构：
[1] Russian Acad Sci, Inst Radio Engn & Elect, Fryazino 141190, Moscow Oblast, Russia
来源：
INSTRUMENTS AND EXPERIMENTAL TECHNIQUES | 2013年 / 56卷 / 01期
关键词：
GaAs; GaAs Layer; Guard Ring; Epitaxial Structure; Electron Beam Induce Current;
D O I：
10.1134/S0020441213010193
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The results of investigations of the properties of a new photovoltaic X-ray detector are presented. The detector was manufactured on the basis of a GaAs (p (+)-n-n'-n (+)) epitaxial structure, which was grown using the vapor-phase epitaxy method. The detector sensitivity to X-rays in a range of effective energies of 7-120 keV was measured. Multichannel linear X-ray detectors were developed and used in obtaining high-quality digital images.
引用
收藏
页码：87 / 92
页数：6
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