Temperature dependence of the photoluminescence emission from In xGa1-x As quantum wells on GaAs(311) substrates

被引：0
|
作者：
Rojas-Ramírez, J.S. [1 ]
Goldhahn, R. [2 ]
Moser, P. [2 ]
Huerta-Ruelas, J. [3 ]
Hernández-Rosas, J. [1 ]
López-López, M. [1 ,4 ]
机构：
[1] Physics Department, Centro de Investigación y Estudios Avanzados, IPN, Apartado Postal 14-740, México D.F. 07360, Mexico
[2] Institut of Physics, Technical University Ilmenau, PF 100565, 98684 Ilmenau, Germany
[3] Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada, IPN, Cerro Blanco 141, Col. Colinas del Cimatario, Querétaro Qro. 76090, Mexico
[4] Centro de Física Aplicada y Tecnología Avanzada, Universidad Nacional Autónoma de México, Apartado Postal 1-1010, Querétaro 76000, Mexico
来源：
Journal of Applied Physics | 2008年 / 104卷 / 12期
关键词：
Semiconductor quantum wells;
D O I：
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摘要：
Journal article (JA)
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