PHOTOLUMINESCENCE FROM AlGaAs-GaAs SINGLE QUANTUM WELLS WITH GROWTH INTERRUPTED HETEROINTERFACES GROWN ON GaAs (100) AND (311) SUBSTRATES AT VARIOUS GROWTH TEMPERATURES BY MOLECULAR BEAM EPITAXY.

被引：0
|
作者：
Fukunaga, Toshiaki [1 ]
Nakashima, Hisao [1 ]
机构：
[1] Optoelectronics Joint Research Lab, Kawasaki, Jpn, Optoelectronics Joint Research Lab, Kawasaki, Jpn
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 1986年 / 25卷 / 10期
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摘要：
SEMICONDUCTING ALUMINUM COMPOUNDS
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页码：856 / 858
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