共 50 条
- [1] PHOTOLUMINESCENCE FROM AlGaAs-GaAs SINGLE QUANTUM WELLS WITH GROWTH INTERRUPTED HETEROINTERFACES GROWN BY MOLECULAR BEAM EPITAXY. Japanese Journal of Applied Physics, Part 2: Letters, 1985, 24 (07): : 510 - 512
- [2] PHOTOLUMINESCENCE FROM ALGAAS-GAAS SINGLE QUANTUM-WELLS WITH GROWTH INTERRUPTED HETEROINTERFACES GROWN ON GAAS(100) AND GAAS(311) SUBSTRATES AT VARIOUS GROWTH TEMPERATURES BY MOLECULAR-BEAM EPITAXY JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (10): : L856 - L858
- [3] PHOTOLUMINESCENCE FROM AlGaAs-GaAs SINGLE QUANTUM WELLS WITH GROWTH INTERRUPTED HETEROINTERFACES GROWN ON GaAs (100) AND (311) SUBSTRATES AT VARIOUS GROWTH TEMPERATURES BY MOLECULAR BEAM EPITAXY. Japanese Journal of Applied Physics, Part 2: Letters, 1986, 25 (10): : 856 - 858
- [6] PHOTOLUMINESCENCE FROM GAAS/ALGAAS QUANTUM-WELLS GROWN AT 350-DEGREES-C BY CONVENTIONAL MOLECULAR-BEAM EPITAXY JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (10A): : L1726 - L1728
- [7] PHOTOLUMINESCENCE STUDY OF GAAS-ALGAAS MULTIQUANTUM WELL GROWN BY MOLECULAR-BEAM EPITAXY JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (01): : 59 - 63
- [8] Photoluminescence from GaAs/AlGaAs quantum wells grown at 350°C by conventional molecular beam epitaxy Japanese Journal of Applied Physics, Part 2: Letters, 1991, 30 (10 A):