Temperature Dependence of Electron Emission from InAs/GaAs Quantum Dots

被引：0
|
作者：
Lin, S. W. [1 ,2 ]
Song, A. M. [2 ]
机构：
[1] Hainan Univ, Minist Educ Applicat Technol Chem Mat Hainan Supe, Key Lab, Haikou 570228, Hainan, Peoples R China
[2] Univ Manchester, Sch Elect & Elect Engn, Manchester M60 1QD, Lancs, England
来源：
PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS | 2011年 / 1399卷
关键词：
Quantum dots; electron emission; temperature;
D O I：
10.1063/1.3666410
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We study the temperature dependence of electron emission from self-assembled InAs/GaAs quantum dots. A theoretical treatment for electron thermal and tunneling emissions from quantum dots is performed to achieve the "effective emission rate" according to the experimentally obtained quantities. The dominant emission mechanism is found to vary as the temperature decreases.
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页数：2
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