Temperature dependence of the photoluminescence emission from In xGa1-x As quantum wells on GaAs(311) substrates

被引：0
|
作者：
Rojas-Ramírez, J.S. [1 ]
Goldhahn, R. [2 ]
Moser, P. [2 ]
Huerta-Ruelas, J. [3 ]
Hernández-Rosas, J. [1 ]
López-López, M. [1 ,4 ]
机构：
[1] Physics Department, Centro de Investigación y Estudios Avanzados, IPN, Apartado Postal 14-740, México D.F. 07360, Mexico
[2] Institut of Physics, Technical University Ilmenau, PF 100565, 98684 Ilmenau, Germany
[3] Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada, IPN, Cerro Blanco 141, Col. Colinas del Cimatario, Querétaro Qro. 76090, Mexico
[4] Centro de Física Aplicada y Tecnología Avanzada, Universidad Nacional Autónoma de México, Apartado Postal 1-1010, Querétaro 76000, Mexico
来源：
Journal of Applied Physics | 2008年 / 104卷 / 12期
关键词：
Semiconductor quantum wells;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [41] PRESSURE-DEPENDENCE OF PHOTOLUMINESCENCE IN INXGA1-XAS/GAAS STRAINED QUANTUM-WELLS
    HOU, HQ
    WANG, LJ
    TANG, RM
    ZHOU, JM
    PHYSICAL REVIEW B, 1990, 42 (05): : 2926 - 2931
  • [42] Temperature dependence of excitonic transitions in AlxGa1-xAs/GaAs quantum wells
    Lourenço, SA
    Dias, IFL
    Duarte, JL
    Laureto, E
    Iwamoto, H
    Meneses, EA
    Leite, JR
    SUPERLATTICES AND MICROSTRUCTURES, 2001, 29 (03) : 225 - 231
  • [43] Electron-density dependence of photoluminescence from Be-δ-doped GaAs quantum wells with a back gate
    Yamaguchi, M
    Nomura, S
    Sato, D
    Akazaki, T
    Tamura, H
    Takayanagi, H
    Realizing Controllable Quantum States: MESOSCOPIC SUPERCONDUCTIVITY AND SPINTRONICS, 2005, : 468 - 472
  • [44] TEMPERATURE-DEPENDENCE OF EXCITON-CAPTURE AT IMPURITIES IN GAAS/ALXGA(1-X)AS QUANTUM-WELLS
    HARRIS, CI
    MONEMAR, B
    HOLTZ, PO
    KALT, H
    SUNDARAM, M
    MERZ, JL
    GOSSARD, AC
    JOURNAL DE PHYSIQUE IV, 1993, 3 (C5): : 171 - 174
  • [45] Temperature dependence of photoluminescence in InAsP/InP strained multiple quantum wells
    Zhao, Y.-G., 1600, American Inst of Physics, Woodbury, NY, United States (76):
  • [46] Room-temperature photoluminescence and electroluminescence of 1.3-μm-range BGaInAs quantum wells on GaAs substrates
    El-Jaroudi, R. H.
    McNicholas, K. M.
    Briggs, A. F.
    Sifferman, S. D.
    Nordin, L.
    Bank, S. R.
    APPLIED PHYSICS LETTERS, 2020, 117 (02)
  • [47] Temperature dependence of photoluminescence spectra for green light emission from InGaN/GaN multiple wells
    Liu, W.
    Zhao, D. G.
    Jiang, D. S.
    Chen, P.
    Liu, Z. S.
    Zhu, J. J.
    Shi, M.
    Zhao, D. M.
    Li, X.
    Liu, J. P.
    Zhang, S. M.
    Wang, H.
    Yang, H.
    Zhang, Y. T.
    Du, G. T.
    OPTICS EXPRESS, 2015, 23 (12): : 15935 - 15943
  • [48] Temperature and excitation density dependence of the photoluminescence from annealed InAs/GaAs quantum dots
    Le Ru, EC
    Fack, J
    Murray, R
    PHYSICAL REVIEW B, 2003, 67 (24)
  • [49] In composition dependence of lateral ordering in InGaAs quantum dots grown on (311)B GaAs substrates
    Xu, HZ
    Zhou, W
    Xu, B
    Jiang, WH
    Gong, Q
    Ding, D
    Wang, ZG
    APPLIED SURFACE SCIENCE, 1999, 141 (1-2) : 101 - 106
  • [50] Micro-photoluminescence study at room temperature of sidewall quantum wires formed on patterned GaAs (311)A substrates by molecular beam epitaxy
    Notzel, R
    Ramsteiner, M
    Menniger, J
    Trampert, A
    Schonherr, HP
    Daweritz, L
    Ploog, KH
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1996, 35 (3A): : L297 - L300
12345