Temperature dependence of photoluminescence spectra for green light emission from InGaN/GaN multiple wells

被引：38
|
作者：
Liu, W. [1 ,3 ]
Zhao, D. G. [1 ]
Jiang, D. S. [1 ]
Chen, P. [1 ]
Liu, Z. S. [1 ]
Zhu, J. J. [1 ]
Shi, M. [1 ]
Zhao, D. M. [1 ]
Li, X. [1 ]
Liu, J. P. [2 ]
Zhang, S. M. [2 ]
Wang, H. [2 ]
Yang, H. [1 ,2 ]
Zhang, Y. T. [4 ]
Du, G. T. [4 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215125, Peoples R China
[3] Chongqing Univ Arts & Sci, Sch Elect & Elect Engn, Chongqing 402160, Peoples R China
[4] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130023, Peoples R China
来源：
OPTICS EXPRESS | 2015年 / 23卷 / 12期
基金：
中国国家自然科学基金;
关键词：
QUANTUM-WELLS; EMITTING-DIODES; LASER-DIODES; BLUE; LOCALIZATION; LAYERS;
D O I：
10.1364/OE.23.015935
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Three green light emitting InGaN/GaN multiple quantum well (MQW) structures with different In composition grown by metal-organic chemical vapor deposition are investigated by the X-ray diffraction and the temperature-dependent photoluminescence (PL) measurements. It is found that when the In composition increases in the InGaN/GaN MQWs, the PL spectral bandwidth may anomalously decrease with increasing temperature. The reduction of PL spectral bandwidth may be ascribed to the enhanced non-radiative recombination process which may lower the light emission efficiency of the localized luminescent centers with shallow localization energy in the high-In-content InGaN quantum wells and also cause a reduction of integrated PL intensity. (C) 2015 Optical Society of America
引用
收藏
页码：15935 / 15943
页数：9
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