Temperature dependence of photoluminescence spectra for green light emission from InGaN/GaN multiple wells

被引：38

作者：

Liu, W. ^{[1
,3
]}

Zhao, D. G. ^{[1
]}

Jiang, D. S. ^{[1
]}

Chen, P. ^{[1
]}

Liu, Z. S. ^{[1
]}

Zhu, J. J. ^{[1
]}

Shi, M. ^{[1
]}

Zhao, D. M. ^{[1
]}

Li, X. ^{[1
]}

Liu, J. P. ^{[2
]}

Zhang, S. M. ^{[2
]}

Wang, H. ^{[2
]}

Yang, H. ^{[1
,2
]}

Zhang, Y. T. ^{[4
]}

Du, G. T. ^{[4
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215125, Peoples R China

[3] Chongqing Univ Arts & Sci, Sch Elect & Elect Engn, Chongqing 402160, Peoples R China

[4] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130023, Peoples R China

来源：

OPTICS EXPRESS | 2015年 / 23卷 / 12期

基金：

中国国家自然科学基金;

关键词：

QUANTUM-WELLS; EMITTING-DIODES; LASER-DIODES; BLUE; LOCALIZATION; LAYERS;

D O I：

10.1364/OE.23.015935

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Three green light emitting InGaN/GaN multiple quantum well (MQW) structures with different In composition grown by metal-organic chemical vapor deposition are investigated by the X-ray diffraction and the temperature-dependent photoluminescence (PL) measurements. It is found that when the In composition increases in the InGaN/GaN MQWs, the PL spectral bandwidth may anomalously decrease with increasing temperature. The reduction of PL spectral bandwidth may be ascribed to the enhanced non-radiative recombination process which may lower the light emission efficiency of the localized luminescent centers with shallow localization energy in the high-In-content InGaN quantum wells and also cause a reduction of integrated PL intensity. (C) 2015 Optical Society of America

引用

页码：15935 / 15943

页数：9

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