Phonon-assisted photoluminescence in InGaN/GaN multiple quantum wells

被引：1
|
作者：
Paskov, PP [1 ]
Holtz, PO
Monemar, B
Kamiyama, S
Iwaya, M
Amano, H
Akasaki, I
机构：
[1] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden
[2] Meijo Univ, Dept Elect Engn & Elect, Tempaku Ku, Nagoya, Aichi 468, Japan
[3] Meijo Univ, High Tech Res Ctr, Tempaku Ku, Nagoya, Aichi 468, Japan
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2002年 / 234卷 / 03期
关键词：
D O I：
10.1002/1521-3951(200212)234:3<755::AID-PSSB755>3.0.CO;2-0
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The LO-phonon sidebands of the photoluminescence in InGaN/GaN multiple quantum wells has been investigated in the temperature range from 20 to 300 K. Analysing the intensity distribution among the phonon replicas, the strength of the exciton-phonon interaction has been estimated. The Huang-Rhys factor was found to be approximate to0.3, much larger than in GaN. The enhancement has been attributed to the exciton localization on a length scale smaller than the exciton Bohr radius and to the large internal electric field, which increases the spatial separation of the electron and hole charge densities along the growth axis.
引用
收藏
页码：755 / 758
页数：4
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