Preparation of BaTiO3 films on Si substrate with MgO buffer layer by RF magnetron sputtering

被引：0
|
作者：
Shih, Wen-Ching [1 ]
Liang, Yuan-Sung [1 ]
Wu, Mu-Shiang [1 ]
机构：
[1] Graduate Institute in Electro-Optical Engineering, Tatung University, No. 40 Chungshan North Road, Taipei 104, Taiwan
来源：
Japanese Journal of Applied Physics | 2008年 / 47卷 / 9 PART 2期
关键词：
Highly (002)- or (200)-oriented BaTiO3 thin films were successfully grown on a Si substrate with a MgO buffer layer by RF magnetron sputtering. The deposition parameters need to be stringently controlled in order to grow BaTiO3 films with good crystallinity. The sputtering parameters such as substrate temperature; RF power; gas flow ratio; and deposition pressure were varied to obtain the optimum deposition conditions for the BaTiO3 films. The as-deposited films were characterized by X-ray diffraction analysis and atomic force microscopy to analyze their crystalline structure and surface morphology. The full width at half maximum intensity of the BaTiO3 (002) or (200) peak of the sample fabricated under the optimum deposition parameters was only 0.28. The surface roughness of the BaTiO3 films was about 3.2nm. The results could be useful in the integration of ferroelectric and semiconductor devices on the same Si substrate. © 2008 The Japan Society of Applied Physics;
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页码：7475 / 7479
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