Preparation of SrTiO3 Films on sapphire substrate by RF magnetron sputtering

被引：2
|
作者：
Loginov, VE [1 ]
Hollmann, EK [1 ]
Kozyrev, AB [1 ]
Prudan, AM [1 ]
机构：
[1] Electrotech Univ, St Petersburg 197376, Russia
来源：
VACUUM | 1998年 / 51卷 / 02期
关键词：
D O I：
10.1016/S0042-207X(98)00146-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Strontium titanate films grown at different deposition parameters by RF magnetron sputtering in Ar+O-2 were studied and the best films obtained at 700 degrees C and 3.5 Pa, gas pressure. The crystalline structure of the films, distribution of elements in the film/buffer/substrate structure as well as dielectrical characteristics of films were examined. It was demonstrated that STO films on an Al2O3 substrate buffered by CeO2 is useable for manufacturing of planar capacitors for microwave devices. (C) 1998 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：141 / 143
页数：3
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