Preparation of BaTiO3 films on Si substrate with MgO buffer layer by RF magnetron sputtering

被引：0
|
作者：
Shih, Wen-Ching [1 ]
Liang, Yuan-Sung [1 ]
Wu, Mu-Shiang [1 ]
机构：
[1] Graduate Institute in Electro-Optical Engineering, Tatung University, No. 40 Chungshan North Road, Taipei 104, Taiwan
来源：
Japanese Journal of Applied Physics | 2008年 / 47卷 / 9 PART 2期
关键词：
Highly (002)- or (200)-oriented BaTiO3 thin films were successfully grown on a Si substrate with a MgO buffer layer by RF magnetron sputtering. The deposition parameters need to be stringently controlled in order to grow BaTiO3 films with good crystallinity. The sputtering parameters such as substrate temperature; RF power; gas flow ratio; and deposition pressure were varied to obtain the optimum deposition conditions for the BaTiO3 films. The as-deposited films were characterized by X-ray diffraction analysis and atomic force microscopy to analyze their crystalline structure and surface morphology. The full width at half maximum intensity of the BaTiO3 (002) or (200) peak of the sample fabricated under the optimum deposition parameters was only 0.28. The surface roughness of the BaTiO3 films was about 3.2nm. The results could be useful in the integration of ferroelectric and semiconductor devices on the same Si substrate. © 2008 The Japan Society of Applied Physics;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
页码：7475 / 7479
相关论文
共 50 条
  • [41] The investigations of dielectric and structural properties of polycrystalline BaTiO3 thin films on Pt substrates by RF magnetron sputtering
    Jang, JW
    Cho, WJ
    Hahn, TS
    Choi, SS
    Chung, SJ
    FERROELECTRICS, 1998, 205 (1-4) : 37 - 48
  • [42] Thickness dependence of structural, optical and luminescence properties of BaTiO3 thin films prepared by RF magnetron sputtering
    Maneeshya, L. V.
    Anitha, V. S.
    Thomas, P. V.
    Joy, K.
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2015, 26 (05) : 2947 - 2954
  • [43] Visible PL emission from erbium doped BaTiO3 thin films deposited by RF magnetron sputtering
    Maneeshya, L. V.
    Thomas, P. V.
    Joy, K.
    MATERIALS TODAY-PROCEEDINGS, 2015, 2 (03) : 992 - 996
  • [44] Characterization of BaTiO3 thin films deposited by RF magnetron sputtering for use in a.c. TFEL devices
    Craven, MR
    Cranton, WM
    Toal, S
    Reehal, HS
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (04) : 404 - 409
  • [45] Preparation and characterization of SrTiO3/BaTiO3 thin multilayer films deposited on Pt/Ti/SiO2/Si substrate by radio frequency magnetron sputtering
    Huang, HH
    Hsiao, FY
    Wu, NC
    Wang, MC
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2005, 351 (52-54) : 3809 - 3815
  • [46] BATIO3 FILMS PREPARED BY RF SPUTTERING ONTO INSB OR GAAS
    IIDA, S
    KATAOKA, S
    APPLIED PHYSICS LETTERS, 1971, 18 (09) : 391 - &
  • [47] A study on the properties and fabrication of BaTiO3 thin films by the RF sputtering
    Ryu, KW
    Bae, SG
    Lee, YH
    PROCEEDINGS OF THE 5TH INTERNATIONAL CONFERENCE ON PROPERTIES AND APPLICATIONS OF DIELECTRIC MATERIALS, VOLS 1 AND 2, 1997, : 1017 - 1020
  • [48] PREPARATION OF THIN BATIO3 FILMS BY DC DIODE SPUTTERING
    SHINTANI, Y
    TADA, O
    JOURNAL OF APPLIED PHYSICS, 1970, 41 (06) : 2376 - &
  • [49] Effect of microstructure of MgO buffer layer on BaTiO3 grown on silicon substrates
    Wei, XH
    Li, YR
    Zhu, J
    Liang, Z
    Zhang, Y
    Huang, W
    Jiang, SW
    APPLIED SURFACE SCIENCE, 2005, 252 (05) : 1442 - 1448
  • [50] Thick BaTiO3 Epitaxial Films Integrated on Si by RF Sputtering for Electro-Optic Modulators in Si Photonics
    Posadas, Agham B.
    Park, Hyoju
    Reynaud, Marc
    Cao, Wei
    Reynolds, Jamie D.
    Guo, Wei
    Jeyaselvan, Vadivukkarasi
    Beskin, Ilya
    Mashanovich, Goran Z.
    Warner, Jamie H.
    Demkov, Alexander A.
    ACS APPLIED MATERIALS & INTERFACES, 2021, 13 (43) : 51230 - 51244
12345