Target voltage behaviour of AlN thin films preparated by reactive magnetron sputtering

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School of Mechanical Engineering and Automation, Northeastern University, Shenyang 110004, China [1 ]
不详 [2 ]
不详 [3 ]
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Dongbei Daxue Xuebao | 2008年 / SUPPL.卷 / 127-129期
关键词：
Magnetron sputtering - Reactive sputtering - Nitrogen compounds - Aluminum nitride - III-V semiconductors;
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