Growth of AlN films by magnetron sputtering

被引：15
|
作者：
Uchiyama, S
Ishigami, Y
Ohta, M
Niigaki, M
Kan, H
Nakanishi, Y
Yamaguchi, T
机构：
[1] Hamamatsu Photon KK, Cent Res Lab, Mat Res Lab, Shizuoka 434, Japan
[2] Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 432, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 1998年 / 189卷
关键词：
AlN; magnetron sputtering; XRD; RHEED;
D O I：
10.1016/S0022-0248(98)00328-5
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Uniform and smooth aluminum nitride (AlN) films have been grown on 2 in (0 0 0 1) sapphire substrates by a magnetron sputtering method. The crystal quality was measured by four-crystal X-ray reflectance diffraction, SEM images, RHEED patterns and so on. The crystal quality was found to be best when the N-2/Ar flow ratio was increased to 16.7, Also a thickness uniformity of 0.23% was achieved on the 2 in substrate. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：448 / 451
页数：4
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