Reactive unbalanced magnetron sputtering of AlN thin films

被引：11
|
作者：
Buc, D
Hotovy, I
Hascik, S
Cerven, I
机构：
[1] Slovak Univ Technol Bratislava, Microelect Dept, Bratislava 81219, Slovakia
[2] Slovak Acad Sci, Inst Elect Engn, SK-84239 Bratislava, Slovakia
来源：
VACUUM | 1998年 / 50卷 / 1-2期
关键词：
D O I：
10.1016/S0042-207X(98)00100-6
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Aluminium nitride is of interest for potential use in various microelectronic and optoelectronic applications. C-axis oriented aluminium nitride (AIN) thin films on (100) silicon were prepared by DC balanced and/or unbalanced magnetron reactive sputtering from an Al target under different deposition conditions, specifically, in various external magnetic fields of an auxiliary magnetic coil. We found a correlation between the deposition conditions and the structure, the residual stress and the microhardness of the AIN films. (C) 1998 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：121 / 123
页数：3
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