Growth of AlN films by magnetron sputtering

被引：15

作者：

Uchiyama, S

Ishigami, Y

Ohta, M

Niigaki, M

Kan, H

Nakanishi, Y

Yamaguchi, T

机构：

[1] Hamamatsu Photon KK, Cent Res Lab, Mat Res Lab, Shizuoka 434, Japan

[2] Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 432, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 189卷

关键词：

AlN; magnetron sputtering; XRD; RHEED;

D O I：

10.1016/S0022-0248(98)00328-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Uniform and smooth aluminum nitride (AlN) films have been grown on 2 in (0 0 0 1) sapphire substrates by a magnetron sputtering method. The crystal quality was measured by four-crystal X-ray reflectance diffraction, SEM images, RHEED patterns and so on. The crystal quality was found to be best when the N-2/Ar flow ratio was increased to 16.7, Also a thickness uniformity of 0.23% was achieved on the 2 in substrate. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：448 / 451

页数：4

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