Effect of Sputtering Power on the Growth of Ru films Deposited by Magnetron Sputtering

Ruthenium is deposited by DC magnetron sputtering at different powers and is characterized. The effect of sputtering power on the electrical and structural properties of the film is investigated experimentally. High resolution Xray diffraction is used to characterize the microstructure of Ru films deposited on SiO2 surface. The peak (002) is more sharp and intense with full width at half maximum (MUM) of 0.379 degrees at 250W. The grain size increases with increase in sputtering power improving the crystallinity of the film The film deposited at high sputtering power also showed lower resistivity (12.40 mu Omega-cm) and higher mobility (4.82 cm(2)/V.s) as compared to the film deposited at low power. The surface morphology of the film is studied by atomic force microscopy (AFM).