Growth rate measurement of lateral grains in silicon film during excimer laser annealing

被引：0
|
作者：
Yeh, Wenchang [1 ]
Zhuang, Chun-Jun [1 ]
Ke, Dunyuan [1 ]
机构：
[1] Department of Electronic Engineering, National Taiwan University of Science and Technology, No. 43, Keelung Road, Taipei 106, Taiwan
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 2007年 / 46卷 / 25-28期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [21] EXCIMER LASER ANNEALING OF ION-IMPLANTED SILICON
    NARAYAN, J
    HOLLAND, OW
    WHITE, CW
    YOUNG, RT
    JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) : 1125 - 1130
  • [22] Aligned polycrystalline silicon array thin film by XeCl excimer laser annealing for AMOLED displays
    Chen, C. N.
    Wu, G. M.
    Feng, W. S.
    ADVANCES IN NANOMATERIALS AND PROCESSING, PTS 1 AND 2, 2007, 124-126 : 371 - +
  • [23] MEASUREMENT OF LATTICE TEMPERATURE OF SILICON DURING PULSED LASER ANNEALING
    STRITZKER, B
    POSPIESZCZYK, A
    TAGLE, JA
    PHYSICAL REVIEW LETTERS, 1981, 47 (05) : 356 - 358
  • [24] Grain growth blocking effect of polycrystalline silicon film by thin native silicon oxide barrier during the excimer laser recrystallization
    Seoul Natl Univ, Seoul, Korea, Republic of
    Appl Phys Lett, 4 (460-462):
  • [25] The grain growth blocking effect of polycrystalline silicon film by thin native silicon oxide barrier during the excimer laser recrystallization
    Park, KC
    Jeon, JH
    Park, CM
    Lee, MC
    Han, MK
    Choi, KY
    APPLIED PHYSICS LETTERS, 1999, 75 (04) : 460 - 462
  • [26] 300 WXeCl excimer laser annealing and sequential lateral solidification in low temperature poly silicon technology
    Herbst, L
    Kahlert, HJ
    Fechner, B
    Rebhan, U
    Osmanow, R
    POLY-SILICON THIN FILM TRANSISTOR TECHNOLOGY AND APPLICATIONS IN DISPLAYS AND OTHER NOVEL TECHNOLOGY AREAS, 2003, 5004 : 69 - 76
  • [27] Comprehensive study of lateral grain growth in poly-Si films by excimer laser annealing and its application to thin film transistors
    Kuriyama, Hiroyuki, 1600, JJAP, Minato-ku, Japan (33):
  • [28] Excimer-laser-induced lateral-growth of silicon thin-films
    Ishikawa, K
    Ozawa, M
    Oh, CH
    Matsumura, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (3A): : 731 - 736
  • [29] Lateral growth of poly-Si film by excimer laser and its thin film transistor application
    Choi, Do-Hyun, 1600, Publ by JJAP, Minato-ku, Japan (33):
  • [30] Excimer-laser-induced lateral-growth of silicon thin-films
    Ishikawa, Kensuke
    Ozawa, Motohiro
    Oh, Chang-Ho
    Matsumura, Masakiyo
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1998, 37 (3 A): : 731 - 736
12345