Grain growth blocking effect of polycrystalline silicon film by thin native silicon oxide barrier during the excimer laser recrystallization

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Seoul Natl Univ, Seoul, Korea, Republic of [1 ]
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Appl Phys Lett | / 4卷 / 460-462期
关键词：
Amorphous films - Annealing - Crystallization - Excimer lasers - Grain growth - Laser applications - Polycrystalline materials - Semiconducting silicon - Silica;
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摘要：
The recrystallization depth of amorphous silicon (a-Si) can be precisely controlled by irradiation on the triple film structure of a-Si/thin native silicon oxide/thick a-Si layer, resulting in the upper a-Si film crystallization only. The native thin silicon oxide blocks the upper grain growth into the lower a-Si. This results in a defined boundary between polycrystalline silicon and the a-Si layer.
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