Grain growth blocking effect of polycrystalline silicon film by thin native silicon oxide barrier during the excimer laser recrystallization

The recrystallization depth of amorphous silicon (a-Si) can be precisely controlled by irradiation on the triple film structure of a-Si/thin native silicon oxide/thick a-Si layer, resulting in the upper a-Si film crystallization only. The native thin silicon oxide blocks the upper grain growth into the lower a-Si. This results in a defined boundary between polycrystalline silicon and the a-Si layer.