共 50 条
- [32] Effective dopant activation in silicon film using excimer laser annealing for high-performance thin film transistors Japanese Journal of Applied Physics, 2008, 47 (3 PART 2): : 1858 - 1861
- [33] Oblique Lateral Grain Growth of Si Film in CW Diode Laser Annealing PROCEEDINGS OF 2013 TWENTIETH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD 13): TFT TECHNOLOGIES AND FPD MATERIALS, 2013, : 255 - 256
- [34] Large polycrystalline silicon grains prepared by excimer laser crystallization of sputtered amorphous silicon film with process temperature at 100°C JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (3B): : 1245 - 1249
- [38] STIFFNESS TRIMMING OF HIGH Q MEMS RESONATORS BY EXCIMER LASER ANNEALING OF GERMANIUM THIN FILM ON SILICON 2016 IEEE 29TH INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS (MEMS), 2016, : 1026 - 1029
- [39] Effect of laser-plasma X-ray irradiation on crystallization of amorphous silicon film by excimer laser annealing JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2007, 46 (41-44): : L1061 - L1063
- [40] Study of crystal growth mechanism for poly-Si film prepared by excimer laser annealing JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (2A): : 351 - 356