Transient injection and fast switch on in p-i-n diodes

被引：0
|
作者：
Mnatsakanov, T.T. [1 ]
Tandoev, A.G. [1 ]
Yurkov, S.N. [1 ]
Levinshtein, M.E. [2 ]
Ivanov, P.A. [2 ]
Palmour, J.W. [3 ]
机构：
[1] All-Russia Electrotechnical Institute, Krasnokazarmennaya 12, 111250 Moscow, Russia
[2] Ioffe Physico-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg, Russia
[3] Cree Inc., 4600 Silicon Drive, Durham, NC 27703
来源：
Journal of Applied Physics | 2006年 / 99卷 / 07期
关键词：
Fast and ultrafast switch-on processes in p-n diodes at very high current densities j and very short current rise time τ0 have been investigated analytically. It is demonstrated that even at relatively modest values of the rate of current density rise djdt; the switch-on transient fundamentally differs from that in the classical quasineutral mode. The switch-on processes occur in modes with broken neutrality. The base resistivity is modulated by fast hole and electron waves that propagate toward each other at the maximum possible (saturation) velocities. The conditions for the appearance of fast waves have been established. Analytical expressions for the initial stage of propagation of these waves have been derived. Adequate computer simulation confirms the analytical results. © 2006 American Institute of Physics;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [21] Physical modeling of fast p-i-n diodes with carrier lifetime zoning, part I: Device model
    Bryant, Angus T.
    Lu, Liqing
    Santi, Enrico
    Palmer, Patrick R.
    Hudgins, Jerry L.
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2008, 23 (01) : 189 - 197
  • [22] ELECTRONICALLY TUNED FILTER USING P-I-N DIODES
    HAMILTON, CH
    ELECTRONICS LETTERS, 1970, 6 (22) : 697 - &
  • [23] Neutron dosimetry with planar silicon p-i-n diodes
    Rosenfeld, AB
    Yudelev, M
    Lerch, MLE
    Cornelius, I
    Griffin, P
    Perevertailo, VL
    Anokhin, IE
    Zinets, OS
    Khivrich, VI
    Pinkovskaya, M
    Alexiev, D
    Reinhard, M
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2003, 50 (06) : 2367 - 2372
  • [24] INSTABILITY IN AVALANCHE REGION OF SI P-I-N DIODES
    OKUTO, Y
    KONDO, M
    NAGASHIM.I
    UCHIDA, I
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (05) : 533 - &
  • [25] Thermal Characterization of GaN Vertical p-i-n Diodes
    Dallas, J.
    Pavlidis, G.
    Chatterjee, B.
    Lundh, J. S.
    Jig, M.
    Kim, J.
    Kao, T.
    Detchprohm, T.
    Dupuis, R. D.
    Shen, S.
    Graham, S.
    Choi, S.
    PROCEEDINGS OF THE SIXTEENTH INTERSOCIETY CONFERENCE ON THERMAL AND THERMOMECHANICAL PHENOMENA IN ELECTRONIC SYSTEMS ITHERM 2017, 2017, : 328 - 333
  • [26] OSCILLATIONS IN P-I-N GERMANIUM DIODES IN CROSSED FIELDS
    KAKIHANA, S
    JOURNAL OF APPLIED PHYSICS, 1966, 37 (13) : 5002 - &
  • [27] Phonon assisted tunneling in gated p-i-n diodes
    Sedlmaier, S
    Schulze, J
    Sulima, T
    Fink, C
    Tolksdorf, C
    Bayerstadler, A
    Eisele, I
    Wang, PF
    Hilsenbeck, K
    Hansch, W
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 89 (1-3): : 116 - 119
  • [28] Thermal characterization of gallium nitride p-i-n diodes
    Dallas, J.
    Pavlidis, G.
    Chatterjee, B.
    Lundh, J. S.
    Ji, M.
    Kim, J.
    Kao, T.
    Detchprohm, T.
    Dupuis, R. D.
    Shen, S.
    Graham, S.
    Choi, S.
    APPLIED PHYSICS LETTERS, 2018, 112 (07)
  • [29] Electrical characterization of transparent p-i-n heterojunction diodes
    Hoffman, RL
    Wager, JF
    Jayaraj, MK
    Tate, J
    JOURNAL OF APPLIED PHYSICS, 2001, 90 (11) : 5763 - 5767
  • [30] Reverse-recovery of diamond p-i-n diodes
    Traore, Aboulaye
    Nakajima, Akira
    Makino, Toshiharu
    Kuwabara, Daisuke
    Kato, Hiromitsu
    Ogura, Masahiko
    Takeuchi, Daisuke
    Yamasaki, Satoshi
    IET POWER ELECTRONICS, 2018, 11 (04) : 695 - 699
12345