Oxygen trap hypothesis in silicon oxide

被引：0
|
作者：
Kageshima, Hiroyuki [1 ]
Uematsu, Masahi [1 ]
Akiyama, Toru [2 ]
Ito, Tomonori [2 ]
机构：
[1] NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
[2] Department of Physics Engineering, Mie University, 1515 Kamihama, Tsu 514-8507, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2006年 / 45卷 / 10 A期
关键词：
16;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
页码：7672 / 7674
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