Oxygen trap hypothesis in silicon oxide

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作者
Kageshima, Hiroyuki [1 ]
Uematsu, Masahi [1 ]
Akiyama, Toru [2 ]
Ito, Tomonori [2 ]
机构
[1] NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
[2] Department of Physics Engineering, Mie University, 1515 Kamihama, Tsu 514-8507, Japan
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页码:7672 / 7674
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