Scalable wordline shielding scheme using dummy cell beyond 40 nm NAND flash memory for eliminating abnormal disturb of edge memory cell

被引：0
|
作者：
Park, Ki-Tae [1 ]
Lee, SeungChul [1 ]
Sel, Jong-Sun [1 ]
Choi, Jungdal [1 ]
Kim, Kinam [1 ]
机构：
[1] Semiconductor R and D Center, Memory Business, Samsung Electronics Co., Ltd., San #24, Nongseo-Dong, Yongin-City, Kyunggi-Do 449-711, Korea, Republic of
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2007年 / 46卷 / 4 B期
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Journal article (JA)
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页码：2188 / 2192
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