Decrease in interference effects between cells for metal-oxide-nitride- oxide-silicon NAND flash memory devices with metal spacer layers

被引：0
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作者：
Kim, Sung Ho [1 ]
You, Joo Hyung [1 ]
Whan Kim, Tae [1 ]
机构：
[1] National Research Laboratory for Nano Quantum Electronics Devices, Department of Electronics and Computer Engineering, Hanyang University, Seoul 133-791, Korea, Republic of
来源：
Japanese Journal of Applied Physics | 2011年 / 50卷 / 7 PART 1期
关键词：
Compilation and indexing terms; Copyright 2025 Elsevier Inc;
D O I：
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中图分类号：
学科分类号：
摘要：
Nitrides - NAND circuits - Threshold voltage - Memory architecture - Silicon - Flash memory - Drain current
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