Decrease in interference effects between cells for metal-oxide-nitride- oxide-silicon NAND flash memory devices with metal spacer layers

被引：0

作者：

Kim, Sung Ho ^{[1
]}

You, Joo Hyung ^{[1
]}

Whan Kim, Tae ^{[1
]}

机构：

[1] National Research Laboratory for Nano Quantum Electronics Devices, Department of Electronics and Computer Engineering, Hanyang University, Seoul 133-791, Korea, Republic of

来源：

Japanese Journal of Applied Physics | 2011年 / 50卷 / 7 PART 1期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Nitrides - NAND circuits - Threshold voltage - Memory architecture - Silicon - Flash memory - Drain current

引用

共 50 条

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