Fabrication and characteristics of double-gate zinc oxide nanowire field emitter arrays

被引：0

作者：

Ou, Zhuoran ^{[1
]}

Wang, Chengyun ^{[1
]}

Zhang, Guofu ^{[1
]}

Li, Xinran ^{[1
]}

Ou, Hai ^{[1
]}

Deng, Shaozhi ^{[1
]}

Xu, Ningsheng ^{[1
]}

She, Juncong ^{[1
]}

Chen, Jun ^{[1
]}

机构：

[1] Sun Yat Sen Univ, Sch Elect & Informat Technol, Guangdong Prov Key Lab Display Mat & Technol, State Key Lab Optoelect Mat & Technol, Guangzhou, Peoples R China

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2024年 / 42卷 / 06期

基金：

中国国家自然科学基金;

关键词：

LARGE-AREA; ZNO NANOWIRES; EMISSION; TIPS;

D O I：

10.1116/6.0004043

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Large area addressable zinc oxide (ZnO) nanowire field emitter arrays (FEAs) have important applications in vacuum microelectronic devices such as flat panel x-ray sources. However, further work on increasing the performance of gated ZnO nanowire FEAs is needed. In this work, we propose double-gate ZnO nanowire FEAs. Simulation results show that the double-gate structure can realize higher gate modulation capability compared with the single-gate structure. Double-gate ZnO nanowire FEAs have been fabricated, and their performance has been studied. The maximum emission current density (3.32 mA/cm(2)) and transconductance (2433 nS) obtained in this work are higher than the previously reported ZnO nanowire FEAs. The results verify that double-gate ZnO nanowire FEAs are promising for applications in large area vacuum microelectronic devices.

引用

页数：9

共 50 条

[21] A novel emitter-sharpened double-gate race-track-shaped field emitter structure
Wang, BP
Huang, ZP
Sin, JKO
Poon, VMC
Tang, YM
Wang, C
Xue, KX
Tong, LS
IEEE ELECTRON DEVICE LETTERS, 1999, 20 (12) : 621 - 623
[22] A pH sensor with a double-gate silicon nanowire field-effect transistor
Ahn, Jae-Hyuk
Kim, Jee-Yeon
Seol, Myeong-Lok
Baek, David J.
Guo, Zheng
Kim, Chang-Hoon
Choi, Sung-Jin
Choi, Yang-Kyu
APPLIED PHYSICS LETTERS, 2013, 102 (08)
[23] Aperture Size Dependent Collimation in Double Gate Field Emitter Arrays
Helfenstein, P.
Kirk, E.
Jefimovs, K.
Escher, C.
Fink, H. -W.
Tsujino, S.
2011 24TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE (IVNC), 2011, : 103 - +
[24] Field Emission Beam Characteristics of a Double-Gate Single Nanoemitter
Lee, Chiwon
Das Kanungo, Pratyush
Guzenko, Vitaliy
Hefenstein, Patrick
Tsujino, Soichiro
Kassier, Guenther
Casandruc, Albert
Miller, R. J. Dwayne
2014 27TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE (IVNC), 2014,
[25] Erratum: Measurement of transverse emittance and coherence of double-gate field emitter array cathodes
Soichiro Tsujino
Prat Das Kanungo
Mahta Monshipouri
Chiwon Lee
R. J. Dwayne Miller
Nature Communications, 8
[26] Fabrication of Coaxis-Gated ZnO Nanowire Field-Emitter Arrays With In-Plane Focusing Gate Electrode Structure
Cao, Xiuqing
Yin, Jing
Wang, Libin
Zhang, Guofu
Deng, Shaozhi
She, Juncong
Xu, Ningsheng
Chen, Jun
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (02) : 677 - 683
[27] Analytical Modeling of Double-Gate and Nanowire Junctionless ISFETs
Yesayan, Ashkhen
Jazaeri, Farzan
Sallese, Jean-Michel
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (03) : 1157 - 1164
[28] Read Characteristics of Independent Double-Gate Poly-Si Nanowire SONOS Devices
Lin, Horng-Chih
Lin, Zer-Ming
Chen, Wei-Chen
Huang, Tiao-Yuan
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (11) : 3771 - 3777
[29] Fabrication technologies of field emitter arrays
Choi, JH
Ryu, YS
Kang, JH
Jang, JE
Kim, JM
Hong, JP
Lim, DY
Michine, V
FLAT PANEL DISPLAY MATERIALS III, 1997, 471 : 211 - 216
[30] Fabrication of iridium field emitter arrays
Chalamala, BR
Wei, Y
Rossi, G
Smith, BG
Reuss, RH
APPLIED PHYSICS LETTERS, 2000, 77 (20) : 3284 - 3286

← 1 2 3 4 5 →