Fabrication and characteristics of double-gate zinc oxide nanowire field emitter arrays

被引：0

作者：

Ou, Zhuoran ^{[1
]}

Wang, Chengyun ^{[1
]}

Zhang, Guofu ^{[1
]}

Li, Xinran ^{[1
]}

Ou, Hai ^{[1
]}

Deng, Shaozhi ^{[1
]}

Xu, Ningsheng ^{[1
]}

She, Juncong ^{[1
]}

Chen, Jun ^{[1
]}

机构：

[1] Sun Yat Sen Univ, Sch Elect & Informat Technol, Guangdong Prov Key Lab Display Mat & Technol, State Key Lab Optoelect Mat & Technol, Guangzhou, Peoples R China

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2024年 / 42卷 / 06期

基金：

中国国家自然科学基金;

关键词：

LARGE-AREA; ZNO NANOWIRES; EMISSION; TIPS;

D O I：

10.1116/6.0004043

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Large area addressable zinc oxide (ZnO) nanowire field emitter arrays (FEAs) have important applications in vacuum microelectronic devices such as flat panel x-ray sources. However, further work on increasing the performance of gated ZnO nanowire FEAs is needed. In this work, we propose double-gate ZnO nanowire FEAs. Simulation results show that the double-gate structure can realize higher gate modulation capability compared with the single-gate structure. Double-gate ZnO nanowire FEAs have been fabricated, and their performance has been studied. The maximum emission current density (3.32 mA/cm(2)) and transconductance (2433 nS) obtained in this work are higher than the previously reported ZnO nanowire FEAs. The results verify that double-gate ZnO nanowire FEAs are promising for applications in large area vacuum microelectronic devices.

引用

页数：9

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