Development of Low On-Resistance and Low Reverse Recovery Charge Power MOSFET for Large-Capacity Communication Systems

被引：0

作者：

Kaneko A. ^{[1
]}

Kachi T. ^{[1
]}

Kaganoi K. ^{[2
]}

Nishiwaki T. ^{[2
]}

机构：

[1] Toshiba Electronic Devices & Storage Corporation, 1-1, Iwauchi-machi, Ishikawa, Nomi

[2] Toshiba Electronic Devices & Storage Corporation, 580-1, Horikawa-cho, Saiwai-ku, Kanagawa, Kawasaki

来源：

IEEJ Transactions on Electronics, Information and Systems | 2024年 / 144卷 / 03期

关键词：

body diode; gate charge; on-resistance; power MOSFET; reverse recovery charge; trench field plate structure;

D O I：

10.1541/ieejeiss.144.263

中图分类号：

学科分类号：

摘要：

This paper proposes a low on-resistance and low reverse recovery charge Power MOSFET Technologies for large-capacity communication systems. We have developed 150 V class power metal-oxide-semiconductor field-effect transistor (MOSFET) products featuring low on-resistance, gate charge, and reverse recovery charge characteristics by deep trench field plate technology and lifetime control technique. On-resistance reduced by 44% and reverse recovery charge reduced by 74% compared to the previous generation product. The device achieved peak power conversion efficiency of 94.6%. © 2024 The Institute of Electrical Engineers of Japan.

引用

页码：263 / 266

页数：3

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