Development of Low On-Resistance and Low Reverse Recovery Charge Power MOSFET for Large-Capacity Communication Systems

被引：0
|
作者：
Kaneko A. [1 ]
Kachi T. [1 ]
Kaganoi K. [2 ]
Nishiwaki T. [2 ]
机构：
[1] Toshiba Electronic Devices & Storage Corporation, 1-1, Iwauchi-machi, Ishikawa, Nomi
[2] Toshiba Electronic Devices & Storage Corporation, 580-1, Horikawa-cho, Saiwai-ku, Kanagawa, Kawasaki
来源：
IEEJ Transactions on Electronics, Information and Systems | 2024年 / 144卷 / 03期
关键词：
body diode; gate charge; on-resistance; power MOSFET; reverse recovery charge; trench field plate structure;
D O I：
10.1541/ieejeiss.144.263
中图分类号：
学科分类号：
摘要：
This paper proposes a low on-resistance and low reverse recovery charge Power MOSFET Technologies for large-capacity communication systems. We have developed 150 V class power metal-oxide-semiconductor field-effect transistor (MOSFET) products featuring low on-resistance, gate charge, and reverse recovery charge characteristics by deep trench field plate technology and lifetime control technique. On-resistance reduced by 44% and reverse recovery charge reduced by 74% compared to the previous generation product. The device achieved peak power conversion efficiency of 94.6%. © 2024 The Institute of Electrical Engineers of Japan.
引用
收藏
页码：263 / 266
页数：3
相关论文
共 50 条
  • [31] Design of non-uniform 100-V super-junction trench power MOSFET with low on-resistance
    Lho, Young Hwan
    Yang, Yil-Suk
    IEICE ELECTRONICS EXPRESS, 2012, 9 (13): : 1109 - 1114
  • [32] 4H-SiC Semi-Circle Gate Power MOSFET with Low ON-Resistance and High Breakdown Voltage
    Mazumder, Indrani
    Biswas, Abhijit
    Mondal, Chandrima
    2022 IEEE CALCUTTA CONFERENCE, CALCON, 2022, : 80 - 83
  • [33] An Interdigitated GaN MIS-HEMT/SBD Normally-Off Power Switching Device with Low ON-resistance and Low Reverse Conduction Loss
    Lei, Jiacheng
    Wei, Jin
    Tang, Gaofei
    Qian, Qingkai
    Hua, Mengyuan
    Zhang, Zhaofu
    Zheng, Zheyang
    Chen, Kevin J.
    2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2017,
  • [34] Low on-resistance SOI power MOSFET using dynamic threshold (DT) concept for high efficient DC-DC converter
    Hiraoka, Y
    Matsumoto, S
    Sakai, T
    ISPSD'01: PROCEEDINGS OF THE 13TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 2001, : 267 - 270
  • [35] High density, low on-resistance, high side N-channel trench lateral power MOSFET with thick copper metal
    Sawada, M
    Sugi, A
    Iwaya, M
    Takagiwa, K
    Matsunaga, S
    Kajiwara, S
    Mochizuki, K
    Fujishima, N
    ISPSD '04: PROCEEDINGS OF THE 16TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 2004, : 173 - 176
  • [36] A Low-Reverse-Recovery-Charge Superjunction MOSFET With P-Base and N-Pillar Schottky Contacts
    Li, Ping
    Guo, Jingwei
    Lin, Zhi
    Hu, Shengdong
    Shi, Cong
    Tang, Fang
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (04) : 1693 - 1698
  • [37] Low on-resistance 1.2 kV 4H-SiC power MOSFET with Ron, sp of 3.4 mΩ·cm~2
    Qiang Liu
    Qian Wang
    Hao Liu
    Chenxi Fei
    Shiyan Li
    Runhua Huang
    Song Bai
    Journal of Semiconductors, 2020, (06) : 93 - 96
  • [38] Low on-resistance 1.2 kV 4H-SiC power MOSFET with Ron, sp of 3.4 mΩ.cm2
    Liu, Qiang
    Wang, Qian
    Liu, Hao
    Fei, Chenxi
    Li, Shiyan
    Huang, Runhua
    Bai, Song
    JOURNAL OF SEMICONDUCTORS, 2020, 41 (06)
  • [39] Low on-resistance and low feedback-charge, lateral power MOSFETs with multi-drain regions for high-efficient DC/DC converters
    Sakamoto, K
    Shiraishi, M
    Iwasaki, T
    PROCEEDINGS OF THE 14TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 2002, : 25 - 28
  • [40] Low Reverse Recovery Charge 30-V Power MOSFETs for DC-DC Converters
    Hirao, Takashi
    Hashimoto, Takayuki
    Shirai, Nobuyuki
    Arai, Hiroki
    Matsuura, Nobuyoshi
    Matsuura, Hitoshi
    2013 25TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2013, : 221 - 224
12345