Development of Low On-Resistance and Low Reverse Recovery Charge Power MOSFET for Large-Capacity Communication Systems

被引：0
|
作者：
Kaneko A. [1 ]
Kachi T. [1 ]
Kaganoi K. [2 ]
Nishiwaki T. [2 ]
机构：
[1] Toshiba Electronic Devices & Storage Corporation, 1-1, Iwauchi-machi, Ishikawa, Nomi
[2] Toshiba Electronic Devices & Storage Corporation, 580-1, Horikawa-cho, Saiwai-ku, Kanagawa, Kawasaki
来源：
IEEJ Transactions on Electronics, Information and Systems | 2024年 / 144卷 / 03期
关键词：
body diode; gate charge; on-resistance; power MOSFET; reverse recovery charge; trench field plate structure;
D O I：
10.1541/ieejeiss.144.263
中图分类号：
学科分类号：
摘要：
This paper proposes a low on-resistance and low reverse recovery charge Power MOSFET Technologies for large-capacity communication systems. We have developed 150 V class power metal-oxide-semiconductor field-effect transistor (MOSFET) products featuring low on-resistance, gate charge, and reverse recovery charge characteristics by deep trench field plate technology and lifetime control technique. On-resistance reduced by 44% and reverse recovery charge reduced by 74% compared to the previous generation product. The device achieved peak power conversion efficiency of 94.6%. © 2024 The Institute of Electrical Engineers of Japan.
引用
收藏
页码：263 / 266
页数：3
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